EVAPORATION OF MERCURY INTO VACUUM UNDER ISOTHERMAL CONDITIONSNARAYAN SWAROOP SINGHAL.1972; INDIAN J. PHYS.; INDIA; DA. 1972; VOL. 46; NO 11; PP. 499-507; BIBL. 6 REF.Serial Issue

A FAST REFRACTOMETER FOR EVAPORATED THIN FILMS.VAN DER WAL J.1975; PHILIPS TECH. REV.; NETHERL.; DA. 1975; VOL. 35; NO 5; PP. 142-143Article

REVETEMENTS OPTIQUES THERMOREFLECTEURS DEPOSES PAR EVAPORATION SOUS VIDEKOLTUN MM; FAJZIEV SH A.1975; OPT.-MEKH. PROMYSHL.; S.S.S.R.; DA. 1975; VOL. 42; NO 7; PP. 39-41; BIBL. 8 REF.Article

AN ELECTRON BEAM GUN WITH A MULTI-CRUCIBLE FOR EVAPORATION IN UHV AND ITS CHARACTERISTICS.MORI K.1977; VACUUM; G.B.; DA. 1977; VOL. 27; NO 10-11; PP. 579-582; BIBL. 2 REF.Article

SOURCE IONIQUE A EVAPORATEUR AMOVIBLE POUR LA MESURE DE LA COMPOSITION ISOTOPIQUE D'ECHANTILLONS SOLIDESKAVILADZE M SH; MELASHVILI TA.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 5; PP. 162-163; BIBL. 5 REF.Article

UTILISATION DE CRYOPANNEAUX EN METALLISATION SOUS VIDE.BOISSIN JC; CARLE J; LE DIOURON R et al.1974; VIDE; FR.; DA. 1974; NO 169 SUPPL.; PP. 213-220; BIBL. 6 REF.; (JOURN. TECHNOL. VIDE; VERSAILLES; 1974)Conference Paper

WHAT TO LOOK FOR IN VACUUM DEPOSITION EQUIPMENTHOFFMAN VE; PORTER ST.1972; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1972; VOL. 12; NO 10; PP. 56-66 (7 P.)Serial Issue

EVAPORATEURS TUBULAIRES POUR LA PULVERISATION DES COUCHES DANS DIFFERENTES DIRECTIONSCHUBOV PN.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 3; PP. 250-251Serial Issue

DIE AUTOMATISCHE STEUERUNG VON AUFDAMPFPROZESSEN = LA COMMANDE AUTOMATIQUE DES PROCESSUS D'EVAPORATIONWILLIAMS I.1972; VIDE; FR.; DA. 1972; PP. 202-207Serial Issue

VACUUM EVAPORATION EXPERIENCES WITH A RING-TYPE ELECTRON BEAM GUNGILLESPIE FC.1972; VACUUM; G.B.; DA. 1972; VOL. 22; NO 7; PP. 255-256; BIBL. 14 REF.Serial Issue

ELECTRON-BEAM EVAPORATED AL₂O₃ ON SI.MUNRO PC; THOMPSON HW JR.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 1; PP. 127-132; BIBL. 28 REF.Article

EVIDENCE FOR INTERFACIAL SPACE-CHARGE REGIONS IN ELECTRON-BEAM-EVAPORATED SIO.ROGER JA; DUPUY CHS; FONASH SJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3102-3105; BIBL. 18 REF.Article

FIELD EFFECT CONDUCTANCE MODULATION IN VACUUM-EVAPORATED AMORPHOUS SILICON FILMS.NEUDECK GW; MALHOTRA AK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 239-246; BIBL. 20 REF.Article

INTERFACIAL TEMPERATURES AND EVAPORATION COEFFICIENTS WITH JET TENSIMETRY.DAVIS EJ; CHANG R; PETHICA BD et al.1975; INDUSTR. ENGNG CHEM., FUNDAM.; U.S.A.; DA. 1975; VOL. 14; NO 1; PP. 27-33; BIBL. 10 REF.Article

DISPOSITIF PHOTOMETRIQUE POUR LE CONTROLE DES EPAISSEURS DES COUCHES LORS DE LA PREPARATION DE REVETEMENTS OPTIQUES SOUS VIDERODICHEV YU S.1975; OPT.-MEKH. PROMYSHL.; S.S.S.R.; DA. 1975; VOL. 42; NO 7; PP. 42-44; BIBL. 10 REF.Article

CHARGE STORAGE AND STOICHIOMETRY IN ELECTRON BEAM EVAPORATED ALUMINA.EISELE KM.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 1; PP. 148-152; BIBL. 14 REF.Article

INVESTIGATIONS ON EVAPORATED TE-CDS THIN FILM DIODES.DEPPE HR; SCHRADER L; KASSING R et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 27; NO 2; PP. 287-295; BIBL. 12 REF.Article

FABRICATION OF ZN-SI SCHOTTKY BARRIER DIODE BY CONTROLLING THE SUBSTRATE TEMPERATURE DURING EVAPORATIONCHANG CY; CHIU PL; MA CH et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 646-651; BIBL. 14 REF.Serial Issue

PREPARATION OF STANDARD LAYERS BY VACUUM EVAPORATIONESCHBACH HL.1972; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1972; VOL. 102; NO 3; PP. 469-475; BIBL. 23 REF.Serial Issue

DISPOSITIF DE VIDE POUR LA PRODUCTION DE COUCHES MINCES A PARTIR DES VAPEURS DES COMPOSES CHIMIQUES PAR BOMBARDEMENT DU SUPPORT PAR DES ELECTRONSOSIPOV KA; DOROFEEV EV; CHUPROV VN et al.1972; PRIBORY. TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 3; PP. 251-253; BIBL. 9 REF.Serial Issue

ETUDE DE QUELQUES PARAMETRES DE COUCHES DE TELLURURE DE CADMIUM OBTENUES PAR DEPOT SOUS VIDEPOLUDIN VP; SAFRONOVA LI; FILIPPOVA AI et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 81-84; H.T. 1; BIBL. 3 REF.Serial Issue

VACUUM DEPOSITION EQUIPMENT TRENDS.MARKSTEIN HW.1977; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1977; VOL. 17; NO 9 PART. 1; PP. 36-44 (6P.)Article

THE PROPERTIES OF SOME METAL-INSB SURFACE BARRIER DIODES.KORWIN PAWLOWSKI ML; HEASELL EL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 849-852; BIBL. 8 REF.Article

A NEW CRYSTAL MOUNTING METHOD FOR THIN-FILM THICKNESS MONITOR.MATSUZAWA H; KAMIRYO K; KANO T et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 3; PP. 341-344; BIBL. 10 REF.Article

THIN FILM SURFACE ORIENTATION FOR LIQUID CRYSTALSJANNING JL.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 4; PP. 173-174Serial Issue